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1999.5.1

2000.4.31

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¹Ì¼¼Á¶Á÷ Á¦¾î¿¡ ÀÇÇÑ °íÀμº źȭ±Ô¼ÒÀÇ °³¹ß

1997.10.1

2000.8.31

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źȭ±Ô¼Ò-źȭƼŸ´½ º¹ÇÕÀç·áÀÇ ¼Ò°á°ú ¿ªÇÐÀû Ư¼º

1998.9.1

2001.8.31

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°í¼º´É Àý»è°ø±¸¿ë ½Å¼ÒÀç °³¹ß

1999.12.1

2001.11.31

Çѱ¹ÇмúÁøÈïÀç´Ü

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2001.9.1

2004.8.31

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´ë¸³ źȭ±Ô¼Ò ºÐ¸»·ÎºÎÅÍ ¹Ì¸³ źȭ±Ô¼Ò ºÐ¸»ÀÇ Á¦Á¶

2001.3.20

2002.3.19

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2001.12.1

2002.11.30

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2001.10.1

2004.7.25

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2003.12.1

2005.11.30

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2004.7.1

2007.3.31

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2005.3.1

2007.2.28

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2005.5.1

2006.4.30

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2006.10.1

2007.3.31

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2006.11.1

2007.10.31

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2007.5.1

2008.4.30

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2007.10.1

2010.9.30

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2007.6.1

2011.5.31

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2007.7.1

2008.6.30

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2007.7.1

2011.6.30

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2008.5.1

2009.4.30

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2008.9.1

2011.8.31

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2009. 8. 12

2010. 08. 11

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2009. 3. 01

2009. 12. 31

RIST

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2010. 3. 01

2010. 12. 31

RIST

Â÷¼¼´ë ¹ÝµµÃ¼/LED ÇٽɰøÁ¤¿ë ÃÊ°í¼øµµ SiC Á¦Á¶±â¼ú(WPM2¼¼ºÎ°úÁ¦)

2010. 9. 1

2015. 3. 31

Áö½Ä°æÁ¦ºÎ WPM

°í°­µµ ºÒ¼Ò¼º ´Ü¿­ÀçÀÇ Á¦Á¶ ±â¼ú °³¹ß

2011. 3. 1

2011. 12. 31

RIST

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2011. 5. 1

2012. 4. 30

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2011. 7. 18

2012. 3. 17

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2012. 1. 1

2014. 12. 31

Çѱ¹±â°è¿¬±¸¿ø ºÎ¼³Àç·á¿¬±¸¼Ò

Àç·á¿¬±¸¼Ò ÁÖ¿ä»ç¾÷

°í±â´É¼º źȭ±Ô¼Ò-ÁúÈ­¹° º¹ÇÕÀç·á

2012. 5. 1

2015. 4. 30

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2012. 8. 15

2013. 7. 15

RIST

½ã¼¼¶óÅØ ÁúÈ­±Ô¼Ò ºÐ¸»ÀÇ »êó¸® ¹× ¼Ò°á¼º ½ÃÇè

2012. 10. 1

2013. 9. 30

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2014. 1. 1

2014. 5. 31

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2014. 12. 3

2015. 6. 30

Çѱ¹¼¼¶ó¹Í±â¼ú¿ø

Development of Accident Tolerant SiC based Pellet for Innovative Nuclear Fuel

2013.10.01

2016.09.30

Korea Institute of Energy Technology Evaluation and Planning

Development of Functional Silicon Oxycarbide Ceramics

2013.11.01

2016.10.31

National Research Foundation

Developement of low temperature sintering and new composition for SiC membrane

2015.01.01

2017.12.31

Korea Institute of Material Science

Effect of Grain Boundary Structure on Electrical and Thermal Properties of Silicon Carbide Ceramics

2015.05.01

2018.04.30

National Research Foundation

Development of Pressureless Sintered Semiconductor-Grade Silicon Carbide Ceramics with High Density and High Thermal Conductivity

2015.06.01

2016.05.31

Small and Medium business Administration

Development of SiC Ceramics with a Dimension of 300 mm in Diameter and 9 X 10^3 ohm cm of Electrical Resistivity for Semiconductor Processing Components

2016.11.01

2017.10.30

Korea Institute for Advancement of Technology

ź¼Ò-¼¼¶ó¹Í º¹ÇÕÀç ºê·¹ÀÌÅ© ´ë·® »ý»ê¿ë ÄÚ¾î »ðÀÔ ¼ºÇü°øÁ¤ ¹× ±Þ¼Ó ±Ô¼ÒÇÔħ °øÁ¤°³¹ß

2016.11.01

2017.10.31

ÀüºÏTP

ģȯ°æ ¿î¼Û¼ö´Ü ¿£Áø¿ë °í°­µµ ³»¸¶¸ð¼º źȭ±Ô¼Ò ³ª³ë º¹ÇÕÀç·á

2017.03.01

2020.02.28

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Á¶»ç½ÃÇè¿ë »ç°íÀúÇ×¼º Çâ»ó ÇÙ¿¬·á ½ÃÀÛÇ°°³¹ß

2017.12.01

2022.11.30

»ê¾÷Åë»óÀÚ¿øºÎ

Highly Thermally Insulating/Thermally Conducting SiC Ceramics with Nanopore Structure

2018.06.01

2023.05.31

National Research Foundation of Korea

Composition Development for Pyrogenic Ceramic Supports

2019.01.01

2021.12.31

Korea Institute of Materials Science

Development of Localization Technology for Pressureless Sintered, Electrical Resistivity Controlled (0.1~30§Ùcm) 10nm Semiconductor-grade New-SiC without Free-Si, and CVD-SiC coated New-SiC

2020.04.01

2023.12.31

Ministry of Trade, industry and Energy